Method for controlling optical properties of antireflective coatings
US6403151B1 · kind B1 · utility
3Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Apr 18, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is used by a semiconductor processing tool. The method comprises forming a first layer above a substrate layer, and forming an inorganic bottom antireflective coating layer above the first layer by introducing at least two gases at a preselected ratio into the semiconductor processing tools. A signal indicating that the semiconductor processing tool has been serviced is received, and the ratio of the gases is varied in response to receiving the signal to control optical parameters of the bottom antireflective coating layer to enhance subsequent photolithographic processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.