Dose control technique for plasma doping in ultra-shallow junction formations
US6403453B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Jul 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2236
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of plasma doping substrates is provided. The substrate is covered with photoresist and placed within a plasma chamber. A doping gas is introduced into the chamber and ionized. A dilutant gas is also introduced to provide better control of the total amount of dosage associated with a given duration of exposure. The dilutant gas is preferably monatomic to reduce, or eliminate, affects associated with pressure variations within the chamber caused by dissociation of elements within the plasma chamber. The dilutant gas preferably contains lighter elements so as to reduce, or eliminate, damage to the photoresist caused by ion impacts. The dilutant gas is preferably neon or helium. The present method provides a means to better control the dosage and reduce photoresist damage and contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.