Etch method using a dielectric etch chamber with expanded process window

US6403491B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jingbao Liu · Sunnyvale, US
• Judy Wang · Cupertino, US
• Takehiko Komatsu · Yokohama, JP
• Bryan Pu · San Jose, US
• Kenny L. Doan · San Jose, US
• Claes Bjorkman · Mountain View, US
• Melody Chang · Union City, US
• Yunsang Kim · San Jose, US
• Hongching Shan · San Jose, US
• Ruiping Wang · Zhejiang, CN

Key dates

• Filing date: Nov 1, 2000
• Grant date: Jun 11, 2002
• Expiry date: Dec 15, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.