Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method
US6403502B1 · kind B1 · utility
3Cited by
2References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 24, 1998 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Mar 24, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a heat treatment method for a silicon wafer in which the silicon wafer is heat treated in a reducing atmosphere through use of a rapid heating/rapid cooling apparatus. The silicon wafer is heat treated for a period of 1 to 60 seconds at a temperature in the range of 1200° C. to the melting temperature of silicon. The heat treatment method can reduce the density of COPs and micro-defects which serve as nuclei of oxidation induced stacking faults at the surface of the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.