Laminated structure and a method of forming the same
US6404021B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.