Method of stripping photoresist using re-coating material
US6406836B1 · kind B1 · utility
5Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2000 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Mar 21, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of stripping a photoresist layer comprising applying a re-coating material on the photoresist layer which extends through and fills openings in a first layer on which the photoresist layer is disposed, ashing the stack comprised of the photoresist layer and the re-coating material, and removing such re-coating material as remains in the openings in the first layer after the ashing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.