Endpoint detection in the fabrication of electronic devices
US6406924B1 · kind B1 · utility
43Cited by
32References
96Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 1999 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Apr 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chamber 28 comprises a radiation source 58 capable of emitting radiation having a wavelength that is substantially absorbed in a predetermined pathlength in a thickness of a layer 22 on a substrate, and a radiation detector 62 adapted to detect the radiation. The radiation is substantially absorbed in a first thickness of the layer 22, and after at least partial processing of the layer 22, is at least partially transmitted through a second thickness of the layer 22 and reflected by one or more underlayers 24 of the substrate 20.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.