Patent · US Expired

Method of determining the doping concentration across a surface of a semiconductor material

US6407558B2 · kind B2 · utility

2Cited by

19References

6Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Sunil N. Shabde · Cupertino, US
Yowjuang W. Liu · San Jose, US
Ting Tsui · Plano, US

Key dates

Filing date	Dec 15, 2000
Grant date	Jun 18, 2002
Priority date	—
Expiry date	Jan 23, 2021

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/854
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method (100) of determining a doping concentration of a semiconductor material (101) includes the steps of moving carriers (102) in the material, wherein a number of carriers is a function of the doping concentration of the material (101). The carriers are deflected (130) toward a surface (110) of the material (101) and an accumulated charge profile on the surface of the material, due to the deflected carriers, is detected (140) and used to calculate (180) the doping concentration across a surface (110) of the material (101).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.