Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
US6409837B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 13, 1999 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Jan 13, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4558
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for depositing a layer of metal onto a substrate through a chemical vapor deposition process comprises a process chamber for receiving and processing a substrate. A vaporizer element is positioned in a vaporization space of the chamber adjacent the process space, and is operable for being heated to a temperature sufficient to vaporize a liquid metal-containing precursor, such as a copper precursor, into a process gas for delivery to said process space. A nozzle is positioned opposite the vaporizer element and is connectable to a liquid metal-containing precursor supply to atomize and direct the liquid metal-containing precursor into the vaporization space and against the vaporizer element. A gas-dispersing element is positioned between the vaporization space and the process space to disperse the gas into the process space and proximate the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.