Product including a silicon-containing functional layer and an insulating layer made of silicon dioxide, and method fabricating the product

US6410407B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stephan Pindl · Ergoldsbach, DE
• Markus Biebl · Augsburg, DE

Key dates

• Filing date: Mar 30, 2000
• Grant date: Jun 25, 2002
• Expiry date: Mar 30, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/7624
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor product includes a silicon-containing functional layer, an insulating layer made of silicon dioxide, and a stop layer made of silicon nitride, which is disposed between the functional layer and the insulating layer and bonds the functional layer to the insulating layer. The stop layer acts as a diffusion barrier between the functional layer and the insulating layer. A method for fabricating this product starts out with a blank part having the functional layer and the insulating layer. The stop layer is formed by implanting nitrogen into the insulating layer and subsequently heat treating the blank part. As a result of the heat treatment the nitrogen diffuses to the functional layer where it bonds to the silicon in order to form the stop layer.