Method for etching dual damascene structures in organosilicate glass
US6410437B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Sep 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for forming dual damascene etch structures in wafers, and semiconductor devices formed according to the method. The present invention utilizes the two-step etch process to form dual damascene structures in organosilicate dielectric layers. According to one embodiment of the present invention, a first etch step is undertaken utilizing a first, low selectivity etchant, which etches completely through the trench dielectric and almost completely through the via dielectric, leaving a small remainder of the via dielectric over the barrier layer protecting metalized objects protected by the barrier layer. After the first etch step, a second etch step is performed utilizing a second, highly selective etchant. This second etch step is conducted with little damage to the barrier layer.An alternative embodiment of the present invention contemplates a “trench-first” etch strategy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.