Mask-less differential etching and planarization of copper films
US6410442B1 · kind B1 · utility
17Cited by
3References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Aug 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In-laid metallization patterns of copper or a copper alloy are fabricated by a damascene-type process wherein the upper surface of a thick, electroplated copper or copper alloy blanket or overburden layer filling recesses in a substrate surface is subjected to a mask-less, chemically-based differential etching step for partially planarizing/thickness reduction prior to a step of planarization by chemical-mechanical polishing (CMP). The inventive process enables an increase in manufacturing throughput, reduction in cost, and reduction in spent CMP slurry generation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.