Techniques for improving etching in a plasma processing chamber
US6410451B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1999 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Sep 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved methods and apparatus for chemically assisted etch processing in a plasma processing system are disclosed. In accordance with one aspect of the invention, improved techniques suitable for performing an etch process in the plasma processing can be realized. The invention operates to reduce the critical dimension bias that is associated with the etch process. Lower critical dimension bias provides many benefits. One such benefit is that features with higher aspect ratio can be etched correctly. In addition, several other undesired effects, e.g., micro loading, bowing and passivation, can be curtailed using the techniques of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.