Method and apparatus for insitu vapor generation
US6410456B1 · kind B1 · utility
14Cited by
17References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Nov 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.