Method for improving barrier layer adhesion to HDP-FSG thin films
US6410457B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | May 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.