Semiconductor device with barrier layer
US6410968B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Sep 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices are disclosed utilizing a silicon-containing barrier layer. A method of forming a barrier layer on a semiconductor device is disclosed. A semiconductor device is provided. A silicon-containing material is deposited on the semiconductor device. The silicon-containing material is processed in a reactive ambient. The barrier layer can be made primarily oxide, primarily nitride or both by the reactive ambient selected. A semiconductor device is disclosed. The semiconductor device includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer. Other embodiments utilizing a barrier layer are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.