Reactive sputtering method for forming metal-silicon layer

US6413386B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alessandro C. Callegari · Yorktown Heights, US
• Eduard A. Cartier · New York, US
• Michael A. Gribelyuk · Stamford, US
• Harald Okorn-Schmidt · Putnam Valley, US
• Theodore H. Zabel · Yorktown Heights, US

Key dates

• Filing date: Jul 19, 2000
• Grant date: Jul 2, 2002
• Expiry date: Jul 19, 2020

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C14/0057
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Within a method for forming a metal-silicon layer there is first provided a reactor chamber. There is then positioned within the reactor chamber a substrate spaced from a metal source target. There is also provided within the reactor chamber a minimum of a sputter material and a reactive silicon material. There is then sputtered the metal source target positioned within the reactor chamber with the sputter material provided within the reactor chamber in the presence of the reactive silicon material provided within the reactor chamber to form a metal-silicon layer over the substrate. The method is particularly useful for forming metal silicate layers, metal silicon nitride layers and metal silicon oxynitride layers within microelectronic fabrications. An alternative method employs: (1) a silicon source target rather than a metal source target; and (2) a reactive metal material rather than a reactive silicon material.