Method to build multi level structure
US6413854B1 · kind B1 · utility
22Cited by
23References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1999 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Aug 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is patterned. At least one metal is deposited in and on the first dielectric material. Portions of the at least one metal are removed at least in a region above an upper surface of the first dielectric material. The first dielectric material is removed. A second dielectric material is provided in place of first dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.