Power semiconductor device
US6414362B1 · kind B1 · utility
0Cited by
4References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2001 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Jun 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes a die having a drain contact, a source contact, a primary gate contact, a partitioning region that partitions the source contact, and a secondary gate contact disposed in the partitioning region. A conductive strip is connected to the primary and secondary gate contacts. An insulation layer encloses a segment of the conductive strip. A conductive connecting member includes a metal sheet and a conductive paste. The metal sheet is attached to the source contact via the conductive paste and is formed with a groove to expose the insulation layer from the metal sheet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.