Low k dielectric materials with inherent copper ion migration barrier
US6414377B1 · kind B1 · utility
5Cited by
2References
21Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.