Led with alternated strain layer
US6417522B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1999 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Dec 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to light omitting diodes having an AlGaInP active layer disposed between two cladding layers of AlGaInP, with a strain layer grown on the second cladding layer and comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with preselected composition. In one embodiment, the composition of the alternated AlGaInP layers is an ohmic n-electrode on a rear surface of a GaAs substrate: a distributed AlGaAs Bragg reflecting layer in the form of a multi-layer lamination; a first, lower AlGaInP cladding layer grown on the reflecting layer; an AlGaInP active layer grown on the lower cladding layer; a second, upper AlGaInP cladding layer grown on the active layer; a strain layer grown on the second cladding layer, the strain layer comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with the composition: (AlxGa1-x)1-yInyP/(AlnGa1-n)1-hInhP, where 0.5≦x≦1; 0.4≦y≦0.6/0≦a≦0.4; 0≦b≦0.4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.