Layered dielectric film structure suitable for gate dielectric application in sub-0.25 &mgr;m technologies
US6417570B1 · kind B1 · utility
17Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Jun 17, 1999 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jun 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layered gate dielectric structure suppresses boron diffusion and provides a gate dielectric structure which is free of trap sites and pinholes, and which does not introduce mobility or drive current problems. The layered gate dielectric structure includes a film which is originally formed as a structurally deficient nitride film which is subsequently converted to either an oxynitride film or a stoichiometric nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.