Titanium silicide nitride emitters and method
US6417617B2 · kind B2 · utility
3Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jul 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30446
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.