Method and apparatus for stress testing a semiconductor device using laser-induced circuit excitation
US6417680B1 · kind B1 · utility
15Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Sep 29, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
According to an example embodiment, a laser is directed at a target region of a powered semiconductor device via the back side of the device, and active circuitry is selectively excited. In response to the excited circuitry, target circuitry is monitored and a degree of integrity of the operation of the semiconductor device is determined, for example, by detecting the output s/phase characteristics or by monitoring passive emissions from the device. The invention is particularly advantageous in connection with post-manufacture failure analysis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.