Mask-making using resist having SIO bond-containing polymer
US6420084B1 · kind B1 · utility
38Cited by
21References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2000 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Aug 2, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.