Contact structure formed by photolithography process
US6420884B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1999 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Jan 29, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/07342
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A contact structure for testing a semiconductor wafer, a packaged LSI or a printed circuit board is formed of contact beams and a contact substrate. The contact beam is configured by a silicon base having an inclined support portion created through an anisotropic etching process, an insulation layer having a planar shape and formed on the silicon base and projected from the inclined support, and a conductive layer having a planar shape and made of conductive material formed on one surface of the insulation layer so that a beam portion is created by the insulation layer and the conductive layer. The insulation layer and the conductive layer have substantially the same length. The beam portion exhibits a spring force in a transversal direction of the beam portion to establish a contact force when the tip of the beam portion pressed against a contact target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.