Methods of making an etch mask and etching a substrate using said etch mask
US6423239B1 · kind B1 · utility
5Cited by
42References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Nov 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30403
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.