Etching method
US6423242B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1999 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Nov 10, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/33
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When in a chamber, an upper electrode and a lower electrode (suscepter) are provided opposite to each other and with a to-be-treated substrate supported by the lower electrode, the high-frequency electric field is formed between the upper electrode and the lower electrode to generate plasma of the process gas while introducing the process gas into the chamber held to the reduced pressure, and an etching is provided to the to-be-treated substrate with this plasma, the high frequency in the range from 50 to 150 MHZ, for example, 60 MHz, is applied to the upper electrode, and the high frequency in the range from 1 to 4 MHz, for example, 2 MHz, is applied to the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.