Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer
US6423636B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1999 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Nov 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides an apparatus and a method for electrochemical deposition of a metal layer on a substrate that achieves high throughput and minimal edge exclusion. The invention provides a method for forming a metal layer on a substrate comprising: depositing a full coverage seed layer over the substrate; electrochemically depositing a metal layer over the seed layer; and removing any exposed seed layer from an annular edge portion of the substrate. The invention also provides an apparatus for forming a metal layer on a substrate comprising: an electrochemical deposition cell having a cathode contact member adapted to contact a peripheral portion of a substrate at less than about 3 mm from an edge of the substrate, a processing cell adapted to remove any exposed seed layer on a peripheral portion of the substrate; and a transfer chamber having a robot adapted to transfer a substrate between the electrochemical deposition cell and the processing cell for removing exposed seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.