Method for removing etch-induced polymer film and damaged silicon layer from a silicon surface
US6423646B1 · kind B1 · utility
2Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1998 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Jun 4, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention discloses a method for simultaneously removing from a silicon surface polymeric films and damaged silicon layers by exposing the surface to a cleaning solution that contains amine or ethanolamine for a length of time that is sufficient to remove all such unwanted materials. The method is effective in cleaning away damaged silicon layers having a thickness between about 20 å and about 60 å in a period of time between about 2 minutes and about 20 minutes. In a preferred embodiment, the cleaning solution is a water solution of ethanolamine and gallic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.