Silicon-on-sapphire transducer

US6424017B1 · kind B1 · utility

Assignee

• KULITE SEMICONDUCTOR PRODUCTS, INC. · US

Inventors

• Anthony D. Kurtz · Englewood, US
• Alexander A. Ned · Bloomingdale, US

Key dates

• Filing date: May 14, 2001
• Grant date: Jul 23, 2002
• Expiry date: May 14, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/967
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method for making silicon-on-sapphire transducers including the steps of forming a first silicon layer on a first side of a first sapphire wafer; bonding a second sapphire wafer to the first side of the first sapphire wafer such that the first silicon layer is interposed between the first and second sapphire wafers; reducing the thickness of the first sapphire wafer to a predetermined thickness; depositing a second silicon layer on a second surface of the first sapphire wafer, wherein the second surface of the first sapphire wafer is oppositely disposed from the first surface of the first sapphire wafer; bonding a silicon wafer to the second surface of the first sapphire wafer such that the second silicon layer is interposed between the first sapphire wafer and the silicon wafer, wherein the silicon wafer includes p+ regions indicative of a transducer structure and non-p+ regions; and, removing the non-p+ regions of the silicon wafer thus forming the transducer structure of p+ regions on the second surface of the first sapphire wafer.