MRAM memory cell
US6424563B2 · kind B2 · utility
25Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 18, 2001 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Jul 18, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1657
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to an MRAM memory cell including a magnetoresistive resistor and a switching transistor. The magnetoresistive resistor is located between a central metallization plane and an upper metallization plane. The central metallization plane serves for the word line stitch and also for writing. A word line BOOST circuit is provided in the stitch region of each cell, with the result that the critical voltage is not reached in the magnetoresistive resistor and the switching transistor can nevertheless be turned on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.