Process for making a semiconductor integrated circuit device having a dynamic random access memory
US6426255B1 · kind B1 · utility
11Cited by
3References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Apr 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After formation of a groove in a silicon oxide film, a Pt film is formed inside of the groove by electroplating using a conductive underlying film, which has been formed in advance below the silicon oxide film, as a cathode electrode. The silicon oxide film is then removed by etching, followed by dry etching of the conductive underlying film with the Pt film as a mask, whereby a lower electrode of a capacitor is formed from the Pt film and the conductive underlying film which has remained below the Pt film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.