Epitaxial delta doping for retrograde channel profile
US6426279B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Jul 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device exhibiting a super-steep retrograde channel profile to reduce susceptibility to “latch up” is achieved by forming a high impurity concentration layer on a semiconductor substrate and forming a diffusion cap layer near the surface of the high impurity concentration layer. Subsequently, a low impurity concentration layer is formed on the diffusion cap layer of the high impurity concentration layer. The diffusion cap layer formed between the high and low impurity concentration layers substantially prevents the impurities contained in the high impurity concentration layer from diffusing into the overlying low impurity concentration layer, thereby achieving a super-steep retrograde channel profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.