Group III nitride compound semiconductor device
US6426512B1 · kind B1 · utility
140Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Mar 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
Abstract
An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.