Double layer perovskite oxide electrodes
US6426536B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2001 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Apr 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N99/03
Abstract
A method for constructing oxide electrodes for use in an OxFET device is disclosed. The electrodes are formed by first depositing a double layer of conducting perovskite oxides onto an insulating oxide substrate. A resist pattern with the electrode configuration is then defined over the double layer by means of conventional lithography. The top oxide layer is ion milled to a depth preferably beyond the conducting oxide interface, but without reaching the substrate. Chemical etching or RIE is used to remove the part of the lower conductive oxide layer exposed by ion milling without damaging the substrate. Source and drain electrodes are thereby defined, which can be then be used as buried contacts for other perovskites that tend to react with metals. Also disclosed is a field effect transistor structure which includes these source and drain electrodes in a buried channel configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.