NROM cell with generally decoupled primary and secondary injection
US6429063B1 · kind B1 · utility
135Cited by
95References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Mar 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of creating a nitride, programmable read only memory (NROM) cell includes the step of decoupling injection of channel hot electrons into a charge trapping layer of the NROM cell from injection of non-channel electrons into the charge trapping layer. The step of decoupling can include the step of minimizing the injection of the non-channel electrons into the charge trapping layer. Alternatively, it includes the step of minimizing the generation of the non-channel electrons. The present invention includes cells which have minimal injection of non-channel electrons therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.