Patterned buried insulator
US6429091B1 · kind B1 · utility
30Cited by
2References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 8, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Dec 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.