Multiple beam electron beam lithography system
US6429443B1 · kind B1 · utility
87Cited by
7References
9Claims
0Family size
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Key dates
| Filing date | Jun 6, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Jun 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31779
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Multiple beam electron beam lithography uses an array of vertical cavity surface emitting lasers (VCSELS) to generate laser beams, which are then converted to electron beams using a photocathode. The electron beams are scanned across a semiconductor substrate or lithography mask to imprint a pattern thereon. The use of VCSELs simplifies the design of the electron beam column and improves the throughput and writing resolution of the lithography system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.