Semi-selective chemical vapor deposition
US6430458B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/891
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is an apparatus and method for semi-selectively depositing a material on a substrate by chemical vapor deposition to form continuous, void-free contact holes or vias in sub-half micron applications. An insulating layer is preferentially deposited on the field of a substrate to delay or inhibit nucleation of metal on the field. A CVD metal is then deposited onto the substrate and grows selectively in the contact hole or via where a barrier layer serves as a nucleation layer. The process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of contact holes and vias occurs without the formation of an oxide layer on a patterned substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.