Method and apparatus for plasma processing
US6431114B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Sep 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention aims to decrease reflected waves in a vacuum chamber to suppress standing waves, thereby easily controlling a plasma density so that uniform treatment can be performed. An electromagnetic wave absorber 6 composed of a resistor such as carbon, a dielectric having a large dielectric loss, such as water, or a magnetic material such as ferrite-based ceramic, or a combination of these, is provided on an inner wall surface of a first vacuum chamber 21. Microwaves introduced from a waveguide 25 into the first vacuum chamber 21 via a transmissive window 23 are absorbed to the electromagnetic wave absorber 6 to suppress reflected waves, whereby a plasma density distribution with a nearly planned pattern is easily formed at an ECR point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.