Implanatation process for improving ceramic resistance to corrosion
US6432256B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 25, 1999 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Feb 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32477
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for improving the corrosion resistance of ceramic parts in a substrate processing chamber by implanting the parts with rare-earth ions. The implanted ceramic parts are highly resistant to corrosive environments that can be formed in semiconductor manufacturing equipment including those found in high temperature applications and high density plasma applications. In a preferred embodiment of the method of the present invention, the ceramic parts are implanted with rare-earth ions using an implantation technique based on a metal vapor vacuum arc (MEVVA™) ion source. The implanted ions are then reacted with fluorine radicals in a highly corrosive environment to form a layer of rare-earth fluoride material, RE:F3, at the surface of the ceramic component. The sublimation temperature of such a RE:F3 layer is much higher than that of layers such as AlF3 that are formed on standard ceramic chamber components in such environments (e.g., up to 1100° C. as compared to 600° C.). At substrate processing temperatures less than the sublimation temperature, the formed RE:F3 layer acts as a passivation layer preventing consumption of the ceramic part during further substrate p…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.