Plasma processing apparatus
US6433298B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Sep 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus has a vacuum vessel 2, an annular, transparent plate 23 put on the upper open end of the vacuum vessel 2 and a shower head 50 fitted in an opening formed in a central part of the annular transparent plate 23. A waveguide 25 has an outer guide member 25b and an inner guide member 25a connected to the shower head 50. Film forming gases including a CF gas is supplied through the inner guide member 25a and the shower head 50 into the vacuum vessel 2. A plasma producing gas, such as Ar gas, is supplied through an opening formed in the side wall at a position above the ECR point into the vacuum vessel 2. Active species of the film forming gases are distributed uniformly over the surface of a wafer. The interior of the shower head 50 formed of a metal is not contaminated with particles because the plasma does not flow into the shower head 50.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.