Selective copper alloy deposition
US6433402B1 · kind B1 · utility
17Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Nov 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Copper or a low resistivity copper alloy is initially deposited to fill relatively narrow openings leaving relatively wider openings unfilled. A copper alloy having improved electromigration resistance with respect to copper is then selectively deposited to fill the relatively wider openings, thereby improving electromigration resistance without increasing narrow line resistance. Embodiments include annealing after filling the relatively narrow openings and before filling the relatively wider openings, thereby reducing void formation in narrow lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.