Wafer area pressure control
US6433484B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Aug 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32623
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a confinement device that provides wafer area pressure control greater than 40%. Such a confinement device may be a fixed vertical restriction ring in addition to the confinement ring, where the confinement ring is adjustable. In the alternative, three adjustable confinement rings may be used to provide the desired wafer area pressure control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.