Method and a system for sealing an epitaxial silicon layer on a substrate
US6436194B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2001 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Feb 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.