Dale R. Du Bois
38Patents
8h-index
69Co-inventors
78Inventor score
Filing activity: Apr 25, 1991 → Apr 2, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7566891B2 | Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors | Performing Operations; Transporting | 523 | Active |
| US9355876B2 | Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations | Emerging Cross-Sectional Technologies | 434 | Active |
| US5326725A | Clamping ring and susceptor therefor | Electricity | 100 | Expired |
| US5320680A | Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow | Chemistry; Metallurgy | 39 | Expired |
| US10774423B2 | Tunable ground planes in plasma chambers | Electricity | 37 | Active |
| US8203126B2 | Apparatus and method for exposing a substrate to a rotating irradiance pattern of UV radiation | Electricity | 26 | Active |
| US7777198B2 | Apparatus and method for exposing a substrate to a rotating irradiance pattern of UV radiation | Electricity | 19 | Active |
| US8274017B2 | Multifunctional heater/chiller pedestal for wide range wafer temperature control | Electricity | 11 | Active |
| US6376387B2 | Method of sealing an epitaxial silicon layer on a substrate | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6170433A | Method and apparatus for processing a wafer | Electricity | 7 | Expired |
| US6436194B1 | Method and a system for sealing an epitaxial silicon layer on a substrate | Electricity | 5 | Expired |
| US7922440B2 | Apparatus and method for centering a substrate in a process chamber | Emerging Cross-Sectional Technologies | 4 | Active |
| US8778813B2 | Confined process volume PECVD chamber | Electricity | 4 | Active |
| US6685779B2 | Method and a system for sealing an epitaxial silicon layer on a substrate | Emerging Cross-Sectional Technologies | 2 | Expired |
| US8884524B2 | Apparatus and methods for improving reliability of RF grounding | Electricity | 2 | Active |
| US9593419B2 | Wafer rotation in a semiconductor chamber | Electricity | 2 | Active |
| US10153185B2 | Substrate temperature measurement in multi-zone heater | Electricity | 2 | Active |
| US10281261B2 | In-situ metrology method for thickness measurement during PECVD processes | Electricity | 2 | Active |
| US10570517B2 | Apparatus and method for UV treatment, chemical treatment, and deposition | Chemistry; Metallurgy | 2 | Active |
| US10227695B2 | Shadow ring for modifying wafer edge and bevel deposition | Electricity | 2 | Active |
| US10094486B2 | Method and system for supplying a cleaning gas into a process chamber | Emerging Cross-Sectional Technologies | 1 | Active |
| US9922819B2 | Wafer rotation in a semiconductor chamber | Electricity | 1 | Active |
| US10325799B2 | Dual temperature heater | Electricity | 0 | Active |
| US11031262B2 | Loadlock integrated bevel etcher system | Electricity | 0 | Active |
| US10720349B2 | Temperature measurement in multi-zone heater | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.