Method of fabricating a MOS device
US6436195B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Sep 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.