Border modification for proximity effect correction in lithography
US6436607B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Dose conservation is used during pattern modification in the data preparation phase of scanning beam lithography. The features to be exposed on a substrate, such as a mask or direct written semiconductor wafer, are corrected while neighboring features suffer little or no change. Thus, the edge of a feature is moved in terms of its exposure location without appreciably affecting the scattering into its neighbors. This achieves a developed feature which meets the intended design edge location. This process also corrects for variations in resist profile angles which otherwise may vary depending upon localized feature packing density. Not only is the feature edge moved but its dose per area is adjusted while conserving total dose over the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.