Hafnium nitride gate dielectric
US6436801B1 · kind B1 · utility
24Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Feb 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect semiconductor device comprising a high permittivity hafnium (or hafnium-zirconium) nitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.